MK5045 150T2
Low power loss, high efficiency
High surge current capabity
Guardring for overvoltage potection
High temperature reverse characteristic is excellent
Trench Schottky Technology
Metal of silicon rectifier, majority carrier conduction
Low power loss, high efficiency
High surge current capabity
Guardring for overvoltage potection
High temperature reverse characteristic is excellent
Trench Schottky Technology
Metal of silicon rectifier, majority carrier conduction
| Characteristics | SYM | MK5045 | Unit |
| Maximum Repetitive Peak Reverse Voltage | VRRM | 45 | V |
| Maximum RMS Voltage | VRMS | 31.5 | V |
| Maximum DC Blocking Voltage | VDC | 45 | V |
| Maximum Average Forward Rectified Current @ Tc=125℃ | I(AV) | 60 | A |
| Peak Forward Surge Current, 8.3mS Single Half Sine-Wave, Superimposed on Rated Load (JEDEC Method) | IFSM | 500 | A |
| Peak Forward Voltage at 40A DC (Note 1) | VF | 0.53 | V |
| Maximum DC Reverse Current at Rated DC Blocking Voltage @ TJ=25℃ | IR | 0.15 | mA |
| Maximum DC Reverse Current at Rated DC Blocking Voltage @ TJ=100℃ | IR | 20 | mA |
| Typical Thermal Resistance Junction to Case | RθJC | 1.5 | ℃/W |
| Junction Temperature Range (Note2) | TJ | -55 to +200 | ℃ |
| Storage Temperature Range | TSTG | -55 to +150 | ℃ |
