Metal of silicon rectifier, majority carrier conduction
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low IR
High surge capacity
High temperature reverse characteristic is excellent
For use in photovoltaic solar cell protection
Trench Schottky rectifier
| Characteristics | SYM | GF6045-180T1 | Unit |
| Maximum Repetitive Peak Reverse Voltage | VRRM | 45 | V |
| Maximum RMS Voltage | VRMS | 31.5 | V |
| Maximum DC Blocking Voltage | VDC | 45 | V |
| Maximum Average Forward Rectified Current @ Tc=125℃ | I(AV) | 45 | A |
| Peak Forward Surge Current, 8.3mS Single Half Sine-Wave, Superimposed on Rated Load (JEDEC Method) | IFSM | 500 | A |
| Peak Forward Voltage at 40A DC (Note1) | VF | 0.52 | V |
| Maximum DC Reverse Current at Rated DC Blocking Voltage @ TJ=25℃ | IR | 0.1 | mA |
| Maximum DC Reverse Current at Rated DC Blocking Voltage @ TJ=100℃ | IR | 10 | mA |
| Typical Thermal Resistance Junction to Case | RθJC | 1 | ℃/W |
| Junction Temperature Range | TJ | -55 to +200 | ℃ |
| Storage Temperature Range | TSTG | -55 to +150 | ℃ |
Junction Temperature In DC forward current without reverse bias, t ≤1h (Note3) | TJ | ≤200 | ℃ |
