Metal of silicon rectifier, majority carrier conduction
Guardring for overvoltage protection
Low power loss, high efficiency
High surge current capability
High thermal conductivityand low stress epoxyresin package
Trench Schottky Technology
| Symbol | Parameter & Test Conditions | Value | Units | |
VRRM | Maximum Repetitive Peak Reverse Voltage | 45 | V | |
IO(AV) | Average Rectified Output Current @ 25° | 50 | A | |
IFSM | Peak Forward Surge Current 8.3ms Single Half Sine-wave Superimposed On Rated Loa | 700 | A | |
RθJC | Maximum Thermal Resistance, Junction To Case | 1.0 | °C/W | |
| TJ | Operating Junction Temperature (Note2 | -55 to +200 | °C | |
| TSTG | Storage Temperature | -55 to +150 | °C | |
VFM | Maximum Instantaneous Forward Voltage (Note3) IF=50A | 0.51 | V | |
IR | Maximum DC reverse current at rated DC blocking voltage VR=VRRM TA = 25°C | 0.2 | mA | |
| IR | Maximum DC reverse current at rated DC blocking voltage VR=VRRM TA = 100°C | 20 | mA | |
| IR | Maximum DC reverse current at rated DC blocking voltage VR=VRRM TA = 125°C | 100 | mA | |
