3Q MK4045 150T1
Low power loss, high efficiency
High surge current capabity
Guardring for overvoltage potection
High temperature reverse characteristic is excellent
Trench Schottky Technology
Metal of silicon rectifier, majority carrier conduction
Low power loss, high efficiency
High surge current capabity
Guardring for overvoltage potection
High temperature reverse characteristic is excellent
Trench Schottky Technology
Metal of silicon rectifier, majority carrier conduction
| Symbol | Parameter & Test Conditions | Value | Units |
| VRRM | Maximum Repetitive Peak Reverse Voltage | 45 | V |
| IO(AV) | Average Rectified Output Current @25℃ | 40 | A |
| IFSM | Peak Forward Surge Current 8.3ms Single Half Sine-wave Superimposed On Rated Load | 500 | A |
| RθJC | Maximum Thermal Resistance, Junction To Case | 1.0 | ℃/W |
| Tj | Operating Junction Temperature (Note2) | -55 to +200 | ℃ |
| TSTG | Storage Temperature | -55 to +150 | ℃ |
| VFM | Maximum Instantaneous Forward Voltage (Note3), IFM=40A | 0.52 | V |
| IR | Maximum DC reverse current at rated DC blocking voltage, VR=VRRM, TA=25℃ | 0.1 | mA |
| IR | Maximum DC reverse current at rated DC blocking voltage, VR=VRRM, TA=100℃ | 9 | mA |
| IR | Maximum DC reverse current at rated DC blocking voltage, VR=VRRM, TA=125℃ | 40 | mA |
