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JK09E ZK5045 180T1

JK09E ZK5045 180T1

  • Low power loss, high efficiency

  • High surge current capabity

  • Guardring for overvoltage potection

  • High temperature reverse characteristic is excellent

  • Trench Schottky Technology

  • Metal of silicon rectifier, majority carrier conduction


DRAWING OF JK09E ZK5045 180T1

jk09e-zk5045-specification.png


SPECIFICATIONS OF JK09E ZK5045 180T1

CharacteristicsSYMZK5045Unit
Maximum Repetitive Peak Reverse VoltageVRRM45V
Maximum RMS VoltageVRMS31.5V
Maximum DC Blocking VoltageVDC45V
Maximum Average Forward Rectified Current @ Tc=125℃I(AV)50A
Peak Forward Surge Current, 8.3mS Single Half Sine-Wave, Superimposed on Rated Load (JEDEC Method)IFSM500A
Peak Forward Voltage at DC Current (Note 1) @ 30A DCVF0.5V
Maximum DC Reverse Current at Rated DC Blocking Voltage @ TJ=25℃IR0.1mA
Maximum DC Reverse Current at Rated DC Blocking Voltage @ TJ=100℃IR15mA
Typical Thermal Resistance Junction to CaseRθJC1℃/W
Junction Temperature Range (Note2)TJ-55 to +200
Storage Temperature RangeTSTG-55 to +150


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