Metal of silicon rectifier, majority carrier conduction
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low IR
High surge capacity
High temperature reverse characteristic is excellent
For use in photovoltaic solar cell protection
Trench Schottky rectifier
| Characteristics | SYM | GF5045-150T1 | Unit |
| Maximum Recurrent Peak Reverse Voltage | VRRM | 45 | V |
| Maximum RMS Voltage | VRMS | 31.5 | V |
| Maximum DC Blocking Voltage | VDC | 45 | V |
| Maximum Average Forward Rectified Current @Tc=125℃ | I(AV) | 30 | A |
| Peak Forward Surge Current8.3ms single half sine-wave superimposed on rated load (JEDEC Method) | IFSM | 400 | A |
| Peak Forward Voltage Per Diode at 30A DC (Note 1) | VF | 0.51 | V |
| Maximum DC Reverse Current at Rated DC Blocking Voltage Per Diode @TJ=25℃ | IR | 0.1 | mA |
| Maximum DC Reverse Current at Rated DC Blocking Voltage Per Diode @TJ=100℃ | IR | 40 | mA |
| Typical Thermal Resistance (Note2) | RθJC | 1.5 | ℃/W |
| Operating Junction Temperature Range | TJ | -55 to +150 | ℃ |
| Storage Temperature Range | TSTG | -55 to +150 | ℃ |
| Junction Temperature In DC forward current without reverse bias, t ≤ 1 h (Note3) | TJ | ≤200 | ℃ |
